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Showing results 1 to 4 of 4

Issue Date	Title Author(s) Journal	View
2022-03	A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding Yoon, Jong-Hyeok ; Chang, Muya ; Khwa, Win-San ; Chih, Yu-Der ; Chang, Meng-Fan ; Raychowdhury, Arijit IEEE Journal of Solid-State Circuits, v.57, no.3, pp.845 - 857, 2022-03	165
2022-01	A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection Yoon, Jong-Hyeok ; Chang, Muya ; Khwa, Win-San ; Chih, Yu-Der ; Chang, Meng-Fan ; Raychowdhury, Arijit IEEE Journal of Solid-State Circuits, v.57, no.1, pp.68 - 79, 2022-01	355
2021-04-29	A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation Yoon, Jong-Hyeok ; Chang, Muya ; Khwa, Win-San ; Chih, Yu-Der ; Chang, Meng-Fan ; Raychowdhury, Arijit IEEE Custom Integrated Circuits Conference (CICC 2021), pp.152 - 153, 2021-04-29	54
2023-03-22	A GaN-Based Reconfigurable Series-Parallel Hybrid Converter Supporting 48/24/12V Input and 0.8-1.2V Output with 83.7/87.8/90.7% Peak Efficiency Gong, Minxiang ; Chen, Hua ; Chang, Muya ; Yoon, Jong-Hyeok ; Zhang, Xin ; Jain, Rinkle ; Raychowdhury, Arijit Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023, pp.912 - 918, 2023-03-22	49

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